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AN822
Vishay Siliconix
105
130
Spreading Copper (s q . in.)
120
Spreading Copper (s q . in.)
95
110
8 5
75
100
90
8 0
65
100 %
70
50 %
100 %
55
50 %
60
0 %
0 %
45
50
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Figure 5. Spreading Copper - Si7401DN
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
www.vishay.com
4
Figure 6. Spreading Copper - Junction-to-Ambient Performance
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps r DS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Document Number 71681
03-Mar-06
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相关PDF资料
SI7425DN-T1-GE3 MOSFET P-CH D-S 12V PPAK 1212-8
SI7431DP-T1-GE3 MOSFET P-CH 200V 2.2A 8-SOIC
SI7440DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7447ADP-T1-GE3 MOSFET P-CH 30V 35A PPAK 1212-8
SI7454CDP-T1-GE3 MOSFET N-CH 100V 8-SOIC
SI7455DP-T1-GE3 MOSFET P-CH D-S 80V PPAK 8SOIC
SI7456DP-T1-GE3 MOSFET N-CH 100V 5.7A PPAK 8SOIC
SI7457DP-T1-GE3 MOSFET P-CH D-S 100V PPAK 8SOIC
相关代理商/技术参数
SI7425DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET
SI7425DN-T1-E3 功能描述:MOSFET 12V 12.6A 3.6W 16mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7425DN-T1-GE3 功能描述:MOSFET 12V 12.6A 3.6W 16mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI742DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI7430DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) WFET
SI7430DP_07 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) MOSFET
SI7430DP_13 制造商:VAISH 制造商全称:VAISH 功能描述:N-Channel 150 V (D-S) MOSFET
SI7430DP-T1-E3 功能描述:MOSFET 150V 26A 64W 45mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube